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Samarium-Doped Indium-Tin-Oxide Electrode for Organic Light-Emitting Devices

Samarium-Doped Indium-Tin-Oxide Electrode for Organic Light-Emitting Devices

Ji-Youn Chun, Jin-Woo Han, Tae Wan Kim

J Nanosci Nanotechnol. 2019 Mar 1;19(3):1626-1629.

PMID: 30469234

Abstract:

Here in, properties of samarium-doped indium-tin-oxide (ITO:Sm) films deposited by DC-magnetron sputtering, and organic light-emitting devices (OLEDs) using an ITO:Sm film as an anode were investigated. The electrical resistivity of the ITO:Sm films increased with Sm doping. The work function of each ITO:Sm film (5.2-5.7 eV) was higher than that of an ITO film (4.8 eV). The crystal structure of the ITO:Sm films was In₂O₃-type when the doping ratio of Sm in the film was up to 5 at.%, and the structure was amorphous in more strongly samarium-doped films. The properties of the OLEDs were varied by the doping ratio of samarium in the ITO:Sm electrodes. The OLEDs with the ITO:Sm electrode exhibited higher efficiency than that of an ITO-based control device at the same current density.

Chemicals Related in the Paper:

Catalog Number	Product Name	Structure	CAS Number	Price
AP50926119	Indium tin oxide		50926-11-9	Price
AP50926119-B	ITO		50926-11-9	Price

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