Home
Resources
Publications
A Study on Reducing Contact Resistance in Solution-Processed Organic Field-Effect Transistors

A Study on Reducing Contact Resistance in Solution-Processed Organic Field-Effect Transistors

Sangmoo Choi, Canek Fuentes-Hernandez, Cheng-Yin Wang, Talha M Khan, Felipe A Larrain, Yadong Zhang, Stephen Barlow, Seth R Marder, Bernard Kippelen

ACS Appl Mater Interfaces. 2016 Sep 21;8(37):24744-52.

PMID: 27579570

Abstract:

We report on the reduction of contact resistance in solution-processed TIPS-pentacene (6,13-bis(triisopropylsilylethynyl)pentacene) and PTAA (poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine]) top-gate bottom-contact organic field-effect transistors (OFETs) by using different contact-modification strategies. The study compares the contact resistance values in devices that comprise Au source/drain electrodes either treated with 2,3,4,5,6-pentafluorothiophenol (PFBT), or modified with an evaporated thin layer of the metal-organic molecular dopant molybdenum tris-[1,2-bis(trifluoromethyl)ethane-1,2-dithiolene] (Mo(tfd)3), or modified with a thin layer of the oxide MoO3. An improved performance is observed in devices modified with Mo(tfd)3 or MoO3 as compared to devices in which Au electrodes are modified with PFBT. We discuss the origin of the decrease in contact resistance in terms of increase of the work function of the modified Au electrodes, Fermi-level pinning effects, and decrease of bulk resistance by electrically doping the organic semiconductor films in the vicinity of the source/drain electrodes.

Chemicals Related in the Paper:

Catalog Number	Product Name	Structure	CAS Number	Price
AP36322904-B	2,3,4,5,6-Pentafluorothiophenol		36322-90-4	Price

As a specialist in analytical chemical Products, Alfa Chemistry offers consumers a wealth of raw materials and a full range of technologies and services.

QUICK LINKS

HEADQUARTERS

Tel:

Fax:

Email: