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Achieving Ultralow Turn-On Voltages in Organic Thin-Film Transistors: Investigating Fluoroalkylphosphonic Acid Self-Assembled Monolayer Hybrid Dielectrics

Achieving Ultralow Turn-On Voltages in Organic Thin-Film Transistors: Investigating Fluoroalkylphosphonic Acid Self-Assembled Monolayer Hybrid Dielectrics

Rachana Acharya, Boyu Peng, Paddy K L Chan, Guido Schmitz, Hagen Klauk

ACS Appl Mater Interfaces. 2019 Jul 31;11(30):27104-27111.

PMID: 31267732

Abstract:

The properties of organic thin-film transistors (TFTs) and thus their ability to address specific circuit design requirements depend greatly on the choice of the materials, particularly the organic semiconductor and the gate dielectric. For a particular organic semiconductor, the TFT performance must be reviewed for different combinations of substrates, fabrication conditions, and the choice of the gate dielectric in order to achieve the optimum TFT and circuit characteristics. We have fabricated and characterized organic TFTs based on the small-molecule organic semiconductor 2,7-diphenyl[1]benzothieno[3,2-b][1]benzothiophene in combination with an ultrathin hybrid gate dielectric consisting of aluminum oxide and a self-assembled monolayer. Fluoroalkylphosphonic acids with chain lengths ranging from 6 to 14 carbon atoms have been used to form the self-assembled monolayer in the gate dielectric, and their influence on the TFT characteristics has been studied. By optimizing the fabrication conditions, a turn-on voltage of 0 V with an on/off current ratio above 106 has been achieved, in combination with charge-carrier mobilities up to 0.4 cm2/V s on flexible plastic substrates and 1 cm2/V s on silicon substrates.

Chemicals Related in the Paper:

Catalog Number	Product Name	Structure	CAS Number	Price
LS773101	2,7-Diphenyl[1]benzothieno[3,2-b][1]benzothiophene			Price

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