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Addition of the Lewis Acid Zn(C 6 F 5 ) 2 Enables Organic Transistors with a Maximum Hole Mobility in Excess of 20 cm 2 V -1 s -1

Addition of the Lewis Acid Zn(C 6 F 5 ) 2 Enables Organic Transistors with a Maximum Hole Mobility in Excess of 20 cm 2 V -1 s -1

Alexandra F Paterson, Leonidas Tsetseris, Ruipeng Li, Aniruddha Basu, Hendrik Faber, Abdul-Hamid Emwas, Julianna Panidi, Zhuping Fei, Muhammad R Niazi, Dalaver H Anjum, Martin Heeney, Thomas D Anthopoulos

Adv Mater. 2019 Jul;31(27):e1900871.

PMID: 31074923

Abstract:

Incorporating the molecular organic Lewis acid tris(pentafluorophenyl)borane [B(C6 F5 )3 ] into organic semiconductors has shown remarkable promise in recent years for controlling the operating characteristics and performance of various opto/electronic devices, including, light-emitting diodes, solar cells, and organic thin-film transistors (OTFTs). Despite the demonstrated potential, however, to date most of the work has been limited to B(C6 F5 )3 with the latter serving as the prototypical air-stable molecular Lewis acid system. Herein, the use of bis(pentafluorophenyl)zinc [Zn(C6 F5 )2 ] is reported as an alternative Lewis acid additive in high-hole-mobility OTFTs based on small-molecule:polymer blends comprising 2,7-dioctyl[1]benzothieno [3,2-b][1]benzothiophene and indacenodithiophene-benzothiadiazole. Systematic analysis of the materials and device characteristics supports the hypothesis that Zn(C6 F5 )2 acts simultaneously as a p-dopant and a microstructure modifier. It is proposed that it is the combination of these synergistic effects that leads to OTFTs with a maximum hole mobility value of 21.5 cm2 V-1 s-1 . The work not only highlights Zn(C6 F5 )2 as a promising new additive for next-generation optoelectronic devices, but also opens up new avenues in the search for high-mobility organic semiconductors.

Chemicals Related in the Paper:

Catalog Number	Product Name	Structure	CAS Number	Price
AP1799902	Bis(pentafluorophenyl)zinc		1799-90-2	Price

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