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Additive Effect of poly(4-vinylphenol) Gate Dielectric in Organic Thin Film Transistor at Low Temperature Process

Additive Effect of poly(4-vinylphenol) Gate Dielectric in Organic Thin Film Transistor at Low Temperature Process

Ho-Jin Yun, Kyu-Ha Baek, Lee-Mi Do, Kwang-Seok Jeong, Yu-Mi Kim, Seung-Dong Yang, Sang-Youl Lee, Hi-Deok Lee, Ga-Won Lee

J Nanosci Nanotechnol. 2013 May;13(5):3313-6.

PMID: 23858850

Abstract:

We fabricated pentacene-based organic thin film transistors (OTFTs) with formulated poly[4-vinylphenol] (PVP) gate dielectrics. The solution of gate dielectrics is prepared by adding methylated poly[melamine-co-formaldehyde] (MMF) and photo-initiator (PI) [1-phenyl-2-hydroxy-2-methylpropane-1-one, Darocur1173@Ciba] to PVP By using a small amount (2.4 wt%) of PI, the cross-linking temperature is lowered to 90 degrees C, which is lower than general thermal curing reaction temperature for the cross-linked PVP (> 180 degrees C). The hysteresis and the leakage current of the OTFTs are also decreased by adding the MMF and PI in the PVP gate dielectric.

Chemicals Related in the Paper:

Catalog Number	Product Name	Structure	CAS Number	Price
AP24979702	Poly(4-vinylphenol)		24979-70-2	Price

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