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Ammonia Reduced Graphene Oxides as a Hole Injection Layer for CdSe/CdS/ZnS Quantum Dot Light-Emitting Diodes

Ammonia Reduced Graphene Oxides as a Hole Injection Layer for CdSe/CdS/ZnS Quantum Dot Light-Emitting Diodes

Qing Lou, Wen-Yu Ji, Jia-Long Zhao, Chong-Xin Shan

Nanotechnology. 2016 Aug 12;27(32):325201.

PMID: 27347655

Abstract:

In this study, we report quantum-dot light-emitting devices (QD-LEDs) using ammonia reduced graphene oxide (rGO) as a hole injection layer (HIL). Compared with pristine GO, QD-LEDs employing rGO as a HIL show higher maximum luminance (936 cd m(-2) versus 699 cd m(-2)) and lower turn-on voltage (V th, 5.0 V versus 7.5 V). The improved performance can be attributed to the synergistic effect of the improved conductivity (1.27 μS cm(-1) versus 0.139 μS cm(-1)) and decreased work function (5.27 eV versus 5.40 eV) of the GO after the reduction process. The above results indicate that ammonia functionalized graphene may be a promising hole injection material for QD-LEDs.

Chemicals Related in the Paper:

Catalog Number	Product Name	Structure	CAS Number	Price
LS71738	Graphene oxide, ammonia functionalized			Price

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