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Atomic Layer Deposition of V 1-x Mo x O 2 Thin Films, Largely Enhanced Luminous Transmittance, Solar Modulation

Atomic Layer Deposition of V 1-x Mo x O 2 Thin Films, Largely Enhanced Luminous Transmittance, Solar Modulation

Xinrui Lv, Yunzhen Cao, Lu Yan, Ying Li, Yuzhi Zhang, Lixin Song

ACS Appl Mater Interfaces. 2018 Feb 21;10(7):6601-6607.

PMID: 29381318

Abstract:

V1-xMoxO2 thin films were fabricated by nanolamination of VO2/MoO3 alternating layers using atomic layer deposition (ALD) process, in which tetrakis-dimethyl-amino vanadium(IV) [V(NMe2)4] and molybdenum hexacarbonyl(VI) [Mo(CO)6] were used as vanadium and molybdenum precursors, respectively. The dopant content of V1-xMoxO2 films was controlled by adjusting MoO3 cycle percentage (PMo) in ALD pulse sequence, which varied from 2 to 10%. Effects of PMo on V1-xMoxO2 crystal structure, morphology, semiconductor-to-metal transition properties, and optical transmittance were studied. A linear reduction of phase transition temperature (Tc) by approximately -11 °C/cycle % Mo was observed for V1-xMoxO2 films within PMo ≤ 5%. Notably, dramatic enhanced luminous transmittance (Tlum = 63.8%) and solar modulation (ΔTsol = 23.5%) were observed for V1-xMoxO2 film with PMo = 7%.

Chemicals Related in the Paper:

Catalog Number	Product Name	Structure	CAS Number	Price
AP13939065	Molybdenumhexacarbonyl		13939-06-5	Price

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