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Carburization of Tungsten Filaments in a Hot-Wire Chemical Vapor Deposition Process Using 1,1,3,3-tetramethyl-1,3-disilacyclobutane

Carburization of Tungsten Filaments in a Hot-Wire Chemical Vapor Deposition Process Using 1,1,3,3-tetramethyl-1,3-disilacyclobutane

L Tong, Y J Shi

ACS Appl Mater Interfaces. 2009 Sep;1(9):1919-26.

PMID: 20355815

Abstract:

The alloying of tungsten filament when using 1,1,3,3-tetramethyl-1,3-disilacyclobutane (TMDSCB) in a hot-wire chemical vapor deposition reactor was systematically studied by scanning electron microscopy, Auger electron spectroscopy, analysis of the power consumed by the filament, and in situ mass spectrometric measurements of the gas-phase species produced in the process. Only carburization of the W filament was observed. The carburization is mainly caused by the interaction of methyl radicals with the filament. Graphite as well as both WC and W2C alloys can form on the filament surface, depending on the filament temperatures and source gas pressures. Both WC and graphite are converted to W2C with the diffusion of C into the filament. It is shown that filament carburization affects the consumption rate of the source gas and the intensities of gas-phase reaction products. Gas-phase reactions dominate at T < or = 1400 degrees C. The carburization rate increases with increasing filament temperatures and dominates at T > or = 1800 degrees C.

Chemicals Related in the Paper:

Catalog Number	Product Name	Structure	CAS Number	Price
AP3449261	1,1,3,3-Tetramethyl-1,3-diphenyldisilazane		3449-26-1	Price

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