Home
Resources
Publications
Direct Solvothermal Synthesis of B/N-doped Graphene

Direct Solvothermal Synthesis of B/N-doped Graphene

Sun-Min Jung, Eun Kwang Lee, Min Choi, Dongbin Shin, In-Yup Jeon, Jeong-Min Seo, Hu Young Jeong, Noejung Park, Joon Hak Oh, Jong-Beom Baek

Angew Chem Int Ed Engl. 2014 Feb 24;53(9):2398-401.

PMID: 24574032

Abstract:

Heteroatom-doping into graphitic networks has been utilized for opening the band gap of graphene. However, boron-doping into the graphitic framework is extremely limited, whereas nitrogen-doping is relatively feasible. Herein, boron/nitrogen co-doped graphene (BCN-graphene) is directly synthesized from the reaction of CCl4 , BBr3 , and N2 in the presence of potassium. The resultant BCN-graphene has boron and nitrogen contents of 2.38 and 2.66 atom %, respectively, and displays good dispersion stability in N-methyl-2-pyrrolidone, allowing for solution casting fabrication of a field-effect transistor. The device displays an on/off ratio of 10.7 with an optical band gap of 3.3 eV. Considering the scalability of the production method and the benefits of solution processability, BCN-graphene has high potential for many practical applications.

Chemicals Related in the Paper:

Catalog Number	Product Name	Structure	CAS Number	Price
LS76153	Boron/Nitrogen co-doped graphene			Price

As a specialist in analytical chemical Products, Alfa Chemistry offers consumers a wealth of raw materials and a full range of technologies and services.

QUICK LINKS

HEADQUARTERS

Tel:

Fax:

Email: