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Effect of Catalyst Layer Density and Growth Temperature in Rapid Atomic Layer Deposition of Silica Using Tris(tert-Pentoxy)silanol

Effect of Catalyst Layer Density and Growth Temperature in Rapid Atomic Layer Deposition of Silica Using Tris(tert-Pentoxy)silanol

Seok-Jun Won, Joon Rae Kim, Sungin Suh, Nae-In Lee, Cheol Seong Hwang, Hyeong Joon Kim

ACS Appl Mater Interfaces. 2011 May;3(5):1633-9.

PMID: 21517074

Abstract:

Rapid atomic layer deposition (RALD) of SiO₂ thin films was achieved using trimethyl-aluminum and tris(tert-pentoxy)silanol (TPS) as the catalyst and Si precursor, respectively. A maximum growth rate as high as ∼28 nm/cycle was obtained by optimizing the catalyst layer density, whereas the previous reports showed lower values of 12 to 17 nm/cycle [Hausmann et al. Science2002, 298, 402-406; Burton et al. Chem. Mater. 2008, 20, 7031-7043]. When the growth temperature was increased from 140 to 230 °C, the growth rate was not much reduced and the TPS pulse time showing a saturated growth rate became rather longer. Si-CH₃, Si-OH, and Si-H bonds were not detected in infrared spectra from the RALD SiO₂ film grown at 230 °C. The film quality could be enhanced substantially by applying a higher growth temperature and an in situ post plasma treatment process.

Chemicals Related in the Paper:

Catalog Number	Product Name	Structure	CAS Number	Price
AP17906353	Tris(tert-pentoxy)silanol		17906-35-3	Price

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