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Effect of Si-H Bond on the Gas-Phase Chemistry of Trimethylsilane in the Hot Wire Chemical Vapor Deposition Process

Effect of Si-H Bond on the Gas-Phase Chemistry of Trimethylsilane in the Hot Wire Chemical Vapor Deposition Process

Y J Shi, X M Li, R Toukabri, L Tong

J Phys Chem A. 2011 Sep 22;115(37):10290-8.

PMID: 21834557

Abstract:

The effect of the Si-H bond on the gas-phase reaction chemistry of trimethylsilane in the hot-wire chemical vapor deposition (HWCVD) process has been studied by examining its decomposition on a hot tungsten filament and the secondary gas-phase reactions in a reactor using a soft laser ionization source coupled with mass spectrometry. Trimethylsilane decomposes on the hot filament via Si-H and Si-CH(3) bond cleavages. A short-chain mechanism is found to dominate in the secondary reactions in the reactor. It has been shown that the hydrogen abstractions of both Si-H and C-H occur simultaneously, with the abstraction of Si-H being favored. Tetramethylsilane and hexamethyldisilane are the two major products formed from the radical recombination reactions in the termination steps. Three methyl-substituted disilacyclobutane molecules, i.e., 1,3-dimethyl-1,3-disilacyclobutane, 1,1,3-trimethyl-1,3-disilacyclobutane, and 1,1,3,3-tetramethyl-1,3-disilacyclobutane are also produced in reactor from the cycloaddition reactions of methyl-substituted silene species. Compared to tetramethylsilane and hexamethyldisilane, a common feature with trimethylsilane is that the short-chain mechanism still dominates. However, a more active involvement of the reactive silene intermediates has been found with trimethylsilane.

Chemicals Related in the Paper:

Catalog Number	Product Name	Structure	CAS Number	Price
AP3449261	1,1,3,3-Tetramethyl-1,3-diphenyldisilazane		3449-26-1	Price

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