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Filament Theory Based WORM Memory Devices Using aluminum/poly(9-vinylcarbazole)/aluminum Structures

Aswin Suresh, Govind Krishnakumar, Manoj A G Namboothiry

Phys Chem Chem Phys. 2014 Jul 14;16(26):13074-7.

PMID: 24888392

Abstract:

Spin coated poly(N-vinylcarbazole) (PVK) sandwiched between thermally evaporated aluminum (Al) electrodes on a glass substrate showed unipolar Write Once Read Many times (WORM) characteristics. The pristine devices were in the low resistance ON state exhibiting ohmic behavior and at a voltage near -2 V, they switched abruptly to the high resistance OFF state showing space charge limited current (SCLC). We suggest that the rupturing of metallic filaments due to Joule heating may explain the effect. The WORM devices exhibited an ON/OFF ratio of 10(8), a retention of 1000 s and an endurance of ∼10(6) cycles in both ON and OFF states.

Chemicals Related in the Paper:

Catalog Number Product Name Structure CAS Number Price
AP25067598 Poly(9-vinylcarbazole) Poly(9-vinylcarbazole) 25067-59-8 Price
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