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Fully Inkjet-Printed Two-Dimensional Material Field-Effect Heterojunctions for Wearable and Textile Electronics

Fully Inkjet-Printed Two-Dimensional Material Field-Effect Heterojunctions for Wearable and Textile Electronics

Tian Carey, Stefania Cacovich, Giorgio Divitini, Jiesheng Ren, Aida Mansouri, Jong M Kim, Chaoxia Wang, Caterina Ducati, Roman Sordan, Felice Torrisi

Nat Commun. 2017 Oct 31;8(1):1202.

PMID: 29089495

Abstract:

Fully printed wearable electronics based on two-dimensional (2D) material heterojunction structures also known as heterostructures, such as field-effect transistors, require robust and reproducible printed multi-layer stacks consisting of active channel, dielectric and conductive contact layers. Solution processing of graphite and other layered materials provides low-cost inks enabling printed electronic devices, for example by inkjet printing. However, the limited quality of the 2D-material inks, the complexity of the layered arrangement, and the lack of a dielectric 2D-material ink able to operate at room temperature, under strain and after several washing cycles has impeded the fabrication of electronic devices on textile with fully printed 2D heterostructures. Here we demonstrate fully inkjet-printed 2D-material active heterostructures with graphene and hexagonal-boron nitride (h-BN) inks, and use them to fabricate all inkjet-printed flexible and washable field-effect transistors on textile, reaching a field-effect mobility of ~91 cm2 V-1 s-1, at low voltage (<5 V). This enables fully inkjet-printed electronic circuits, such as reprogrammable volatile memory cells, complementary inverters and OR logic gates.

Chemicals Related in the Paper:

Catalog Number	Product Name	Structure	CAS Number	Price
AP10043115-A	Hexagonal boron nitride ink		10043-11-5	Price

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