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Growth of Gallium Nitride and Indium Nitride Nanowires on Conductive and Flexible Carbon Cloth Substrates

Growth of Gallium Nitride and Indium Nitride Nanowires on Conductive and Flexible Carbon Cloth Substrates

Yi Yang, Yichuan Ling, Gongming Wang, Xihong Lu, Yexiang Tong, Yat Li

Nanoscale. 2013 Mar 7;5(5):1820-4.

PMID: 23376979

Abstract:

We report a general strategy for synthesis of gallium nitride (GaN) and indium nitride (InN) nanowires on conductive and flexible carbon cloth substrates. GaN and InN nanowires were prepared via a nanocluster-mediated growth method using a home built chemical vapor deposition (CVD) system with Ga and In metals as group III precursors and ammonia as a group V precursor. Electron microscopy studies reveal that the group III-nitride nanowires are single crystalline wurtzite structures. The morphology, density and growth mechanism of these nanowires are determined by the growth temperature. Importantly, a photoelectrode fabricated by contacting the GaN nanowires through a carbon cloth substrate shows pronounced photoactivity for photoelectrochemical water oxidation. The ability to synthesize group III-nitride nanowires on conductive and flexible substrates should open up new opportunities for nanoscale photonic, electronic and electrochemical devices.

Chemicals Related in the Paper:

Catalog Number	Product Name	Structure	CAS Number	Price
AP25617985	Indium(III) nitride		25617-98-5	Price

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