Home
Resources
Publications
High-Performance and Reliable Lead-Free Layered-Perovskite Transistors

High-Performance and Reliable Lead-Free Layered-Perovskite Transistors

Huihui Zhu, Ao Liu, Kyu In Shim, Jisu Hong, Jeong Woo Han, Yong-Young Noh

Adv Mater. 2020 Jun 25;e2002717.

PMID: 32584475

Abstract:

Perovskites have been intensively investigated for their use in solar cells and light-emitting diodes. However, research on their applications in thin-film transistors (TFTs) has drawn less attention despite their high intrinsic charge carrier mobility. In this study, the universal approaches for high-performance and reliable p-channel lead-free phenethylammonium tin iodide TFTs are reported. These include self-passivation for grain boundary by excess phenethylammonium iodide, grain crystallization control by adduct, and iodide vacancy passivation through oxygen treatment. It is found that the grain boundary passivation can increase TFT reproducibility and reliability, and the grain size enlargement can hike the TFT performance, thus, enabling the first perovskite-based complementary inverter demonstration with n-channel indium gallium zinc oxide TFTs. The inverter exhibits a high gain over 30 with an excellent noise margin. This work aims to provide widely applicable and repeatable methods to make the gate more open for intensive efforts toward high-performance printed perovskite TFTs.

Chemicals Related in the Paper:

Catalog Number	Product Name	Structure	CAS Number	Price
LS72738	Phenethylammonium iodide			Price

As a specialist in analytical chemical Products, Alfa Chemistry offers consumers a wealth of raw materials and a full range of technologies and services.

QUICK LINKS

HEADQUARTERS

Tel:

Fax:

Email: