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High Stability Pentacene Transistors Using Polymeric Dielectric Surface Modifier

High Stability Pentacene Transistors Using Polymeric Dielectric Surface Modifier

Xiaohong Wang, Guangqing Lin, Peng Li, Guoqiang Lv, Longzhen Qiu, Yunsheng Ding

J Nanosci Nanotechnol. 2015 Aug;15(8):5867-73.

PMID: 26369163

Abstract:

1,6-bis(trichlorosilyl)hexane (C6Cl), polystyrene (PS), and cross-linked polystyrene (CPS) were investigated as gate dielectric modified layers for high performance organic transistors. The influence of the surface energy, roughness and morphology on the charge transport of the organic thin-film transistors (OTFTs) was investigated. The surface energy and roughness both affect the grain size of the pentacene films which will control the charge carrier mobility of the devices. Pentacene thin-film transistors fabricated on the CPS modified dielectric layers exhibited charge carrier mobility as high as 1.11 cm2 V-1 s-1. The bias stress stability for the CPS devices shows that the drain current only decays 1% after 1530 s and the mobility never decreases until 13530 s.

Chemicals Related in the Paper:

Catalog Number	Product Name	Structure	CAS Number	Price
AP13083948	1,6-Bis(trichlorosilyl)hexane		13083-94-8	Price

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