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Interfacial Engineering With Ultrathin Poly (9,9-di-n-octylfluorenyl-2,7-diyl) (PFO) Layer for High Efficient Perovskite Light-Emitting Diodes

Interfacial Engineering With Ultrathin Poly (9,9-di-n-octylfluorenyl-2,7-diyl) (PFO) Layer for High Efficient Perovskite Light-Emitting Diodes

Chunyan Lin, Ping Chen, ZiYang Xiong, Debei Liu, Gang Wang, Yan Meng, Qunliang Song

Nanotechnology. 2018 Feb 16;29(7):075203.

PMID: 29210672

Abstract:

Organic-inorganic hybrid perovskites have attracted great attention in the field of lighting and display due to their very high color purity and low-cost solution-process. Researchers have done a lot of work in realizing high performance electroluminescent devices. However, the current efficiency (CE) of methyl-ammonium lead halide perovskite light-emitting diodes (PeLEDs) still needs to be improved. Herein, we demonstrate the enhanced performance of PeLEDs through introducing an ultrathin poly(9,9-di-n-octylfluorenyl-2,7-diyl) (PFO) buffer layer between poly(3,4-ethylendioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) and CH3NH3PbBr3 perovskite. Compared to the reference device without PFO, the optimal device luminous intensity, the maximum CE, and the maximum external quantum efficiency increases from 8139 cd m-2 to 30 150 cd m-2, from 7.20 cd A-1 (at 6.8 V) to 10.05 cd A-1 (at 6.6 V), and from 1.73% to 2.44%, respectively. The ultrathin PFO layer not only reduces the exciton quenching at the interface between the hole-transport layer and emission layer, but also passivates the shallow-trap ensure increasing hole injection, as well as increases the coverage of perovskite film.

Chemicals Related in the Paper:

Catalog Number	Product Name	Structure	CAS Number	Price
LS772176	Poly(9,9-di-n-octylfluorenyl-2,7-diyl)			Price

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