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Intrinsic Charge Trapping Observed as Surface Potential Variations in diF-TES-ADT Films

Benjamin C Hoffman, Terry McAfee, Brad R Conrad, Marsha A Loth, John E Anthony, Harald W Ade, Daniel B Dougherty

ACS Appl Mater Interfaces. 2016 Aug 24;8(33):21490-6.

PMID: 27466823

Abstract:

Spatial variations in surface potential are measured with Kelvin probe force microscopy for thin films of 2,8-difluoro-5,11-bis(triethylsilylethynyl)anthradithiophenes (diF-TES-ADT) grown on SiO2 and silane-treated SiO2 substrates by organic molecular beam deposition. The variations are observed both between and within grains of the polycrystalline organic film and are quantitatively different than electrostatic variations on the substrate surfaces. The skewness of surface potential distributions is larger on SiO2 than on HMDS-treated substrates. This observation is attributed to the impact of substrate functionalization on minimizing intrinsic crystallographic defects in the organic film that can trap charge.

Chemicals Related in the Paper:

Catalog Number Product Name Structure CAS Number Price
AP1015071212 diF-TES-ADT diF-TES-ADT 1015071-21-2 Price
AP851817113 TES-ADT TES-ADT 851817-11-3 Price
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