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Low-voltage Graphene Field-Effect Transistors Based on Octadecylphosphonic Acid Modified Solution-Processed High-K Dielectrics

Low-voltage Graphene Field-Effect Transistors Based on Octadecylphosphonic Acid Modified Solution-Processed High-K Dielectrics

Shuang Zhou, Yaorong Su, Yubin Xiao, Ni Zhao, Jianbin Xu, Chingping Wong

Nanotechnology. 2014 Jul 4;25(26):265201.

PMID: 24915783

Abstract:

In this study, a solution-processed bilayer high-k dielectric (Al2O(y)/TiO(x), abbrev. as ATO) was used to realize the low-voltage operation of graphene field-effect transistors (GFETs), in which the graphene was grown by atmospheric pressure chemical vapor deposition (APCVD). Upon modifying the interface between graphene and the dielectric by octadecylphosphonic acid (ODPA), outstanding room-temperature hole mobility up to 5805 cm(2) V(-1) s(-1) and electron mobility of 3232 cm(2) V(-1) s(-1) were obtained in a small gate voltage range from -3.0 V to 3.0 V under a vacuum. Meanwhile, an excellent on/off current ratio of about 8 was achieved. Our studies demonstrate an effective route in which utilizing the low-temperature solution-processed dielectrics can achieve low-voltage and high performance GFETs.

Chemicals Related in the Paper:

Catalog Number	Product Name	Structure	CAS Number	Price
AP4724474	Octadecylphosphonic acid		4724-47-4	Price

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