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Measurement of Diffusion and Segregation in Semiconductor Quantum Dots and Quantum Wells by Transmission Electron Microscopy: A Guide

Thomas Walther

Nanomaterials (Basel). 2019 Jun 8;9(6):872.

PMID: 31181748

Abstract:

Strategies are discussed to distinguish interdiffusion and segregation and to measure key parameters such as diffusivities and segregation lengths in semiconductor quantum dots and quantum wells by electron microscopy methods. Spectroscopic methods are usually necessary when the materials systems are complex while imaging methods may suffice for binary or simple ternary compounds where atomic intermixing is restricted to one type of sub-lattice. The emphasis on methodology should assist microscopists in evaluating and quantifying signals from electron micrographs and related spectroscopic data. Examples presented include CdS/ZnS core/shell particles and SiGe, InGaAs and InGaN quantum wells.

Chemicals Related in the Paper:

Catalog Number Product Name Structure CAS Number Price
LS769102 CdS/ZnS core-shell type quantum dots CdS/ZnS core-shell type quantum dots Price
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