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MoB/g-C 3 N 4 Interface Materials as a Schottky Catalyst to Boost Hydrogen Evolution

MoB/g-C 3 N 4 Interface Materials as a Schottky Catalyst to Boost Hydrogen Evolution

Zechao Zhuang, Yong Li, Zilan Li, Fan Lv, Zhiquan Lang, Kangning Zhao, Liang Zhou, Lyudmila Moskaleva, Shaojun Guo, Liqiang Mai

Angew Chem Int Ed Engl. 2018 Jan 8;57(2):496-500.

PMID: 29119647

Abstract:

Proton adsorption on metallic catalysts is a prerequisite for efficient hydrogen evolution reaction (HER). However, tuning proton adsorption without perturbing metallicity remains a challenge. A Schottky catalyst based on metal-semiconductor junction principles is presented. With metallic MoB, the introduction of n-type semiconductive g-C3 N4 induces a vigorous charge transfer across the MoB/g-C3 N4 Schottky junction, and increases the local electron density in MoB surface, confirmed by multiple spectroscopic techniques. This Schottky catalyst exhibits a superior HER activity with a low Tafel slope of 46 mV dec-1 and a high exchange current density of 17 μA cm-2 , which is far better than that of pristine MoB. First-principle calculations reveal that the Schottky contact dramatically lowers the kinetic barriers of both proton adsorption and reduction coordinates, therefore benefiting surface hydrogen generation.

Chemicals Related in the Paper:

Catalog Number	Product Name	Structure	CAS Number	Price
AP12006983	Molybdenum boride		12006-98-3	Price

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