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Nonvolatile Memory Devices Prepared From Sol-Gel Derived Niobium Pentoxide Films

Nonvolatile Memory Devices Prepared From Sol-Gel Derived Niobium Pentoxide Films

Hyunhee Baek, Chanwoo Lee, Jungkyu Choi, Jinhan Cho

Langmuir. 2013 Jan 8;29(1):380-6.

PMID: 23210494

Abstract:

We report on the resistive switching nonvolatile memory (RSNM) properties of niobium pentoxide (Nb(2)O(5)) films prepared using sol-gel chemistry. A sol-gel derived solution of niobium ethoxide, a precursor to Nb(2)O(5), was spin-coated on to a platinum (Pt)-coated silicon substrate, and was then annealed at approximately 620 and 450 °C to form a Nb(2)O(5) film of polycrystalline and amorphous structure, respectively. A top electrode consisting of Ag, W, Au, or Pt was then coated onto the Nb(2)O(5) films to complete the fabrication. After a forming process of limited current compliance up to 10 mA, known as "electroforming", a resistive switching phenomenon, independent of voltage polarity (unipolar switching), was observed at low operating voltages (0.59 ± 0.05 V(RESET) and 1.03 ± 0.06 V(SET)) with a high ON/OFF current ratio above 10(8). The reported approach offers opportunities for preparing Nb(2)O(5)-based resistive switching memory devices from solution process.

Chemicals Related in the Paper:

Catalog Number	Product Name	Structure	CAS Number	Price
AP3236826	Niobium(V) ethoxide		3236-82-6	Price

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