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Photoresponse Enhancement in Monolayer ReS

Jing-Kai Qin, Dan-Dan Ren, Wen-Zhu Shao, Yang Li, Peng Miao, Zhao-Yuan Sun, PingAn Hu, Liang Zhen, Cheng-Yan Xu

ACS Appl Mater Interfaces. 2017 Nov 15;9(45):39456-39463.

PMID: 29052411

Abstract:

ReS2 films are considered as a promising candidate for optoelectronic applications due to their direct band gap character and optical/electrical anisotropy. However, the direct band gap in a narrow spectrum and the low absorption of atomically thin flakes weaken the prospect for light-harvesting applications. Here, we developed an efficient approach to enhance the performance of a ReS2-based phototransistor by coupling CdSe-CdS-ZnS core-shell quantum dots. Under 589 nm laser irradiation, the responsivity of the ReS2 phototransistor decorated with quantum dots could be enhanced by more than 25 times (up to ∼654 A/W) and the rising and recovery time can be also reduced to 3.2 and 2.8 s, respectively. The excellent optoelectronic performance is originated from the coupling effect of quantum dots light absorber and cross-linker ligands 1,2-ethanedithiol. Photoexcited electron-hole pairs in quantum dots can separate and transfer efficiently due to the type-II band alignment and charge exchange process at the interface. Our work shows that the simple hybrid zero- and two-dimensional hybrid system can be employed for photodetection applications.

Chemicals Related in the Paper:

Catalog Number Product Name Structure CAS Number Price
LS769102 CdS/ZnS core-shell type quantum dots CdS/ZnS core-shell type quantum dots Price
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