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Resistive Switching Memory Devices Based on Electrical Conductance Tuning in poly(4-vinyl Phenol)-Oxadiazole Composites

Resistive Switching Memory Devices Based on Electrical Conductance Tuning in poly(4-vinyl Phenol)-Oxadiazole Composites

Yanmei Sun, Fengjuan Miao, Rui Li, Dianzhong Wen

Phys Chem Chem Phys. 2015 Nov 28;17(44):29978-84.

PMID: 26490192

Abstract:

Nonvolatile memory devices, based on electrical conductance tuning in thin films of poly(4-vinyl phenol) (PVP) and 2-(4-tert-butylphenyl)-5-(4-biphenylyl)-1,3,4-oxadiazole (PBD) composites, are fabricated. The current-voltage characteristics of the fabricated devices show different electrical conductance behaviors, such as the write-once read-many-times (WORM) memory effect, the rewritable flash memory effect and insulator behavior, which depend on the content of PBD in the PVP + PBD composites. The OFF and ON states of the WORM and rewritable flash memory devices are stable under a constant voltage stress or a continuous pulse voltage stress at a read voltage. The memory mechanism is deduced from the modeling of the nature of currents in both states in the devices.

Chemicals Related in the Paper:

Catalog Number	Product Name	Structure	CAS Number	Price
AP15082287	2-(4-tert-Butylphenyl)-5-(4-biphenylyl)-1,3,4-oxadiazole		15082-28-7	Price

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