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Self-assembled Bismuth Selenide (Bi 2 Se 3) quantum dots grown by molecular beam epitaxy

Self-assembled Bismuth Selenide (Bi 2 Se 3) quantum dots grown by molecular beam epitaxy

Marcel S Claro, Ido Levy, Abhinandan Gangopadhyay, David J Smith, Maria C Tamargo

Sci Rep. 2019 Mar 4;9(1):3370.

PMID: 30833604

Abstract:

We report the growth of self-assembled Bi2Se3 quantum dots (QDs) by molecular beam epitaxy on GaAs substrates using the droplet epitaxy technique. The QD formation occurs after anneal of Bismuth droplets under Selenium flux. Characterization by atomic force microscopy, scanning electron microscopy, X-ray diffraction, high-resolution transmission electron microscopy and X-ray reflectance spectroscopy is presented. Raman spectra confirm the QD quality. The quantum dots are crystalline, with hexagonal shape, and have average dimensions of 12-nm height (12 quintuple layers) and 46-nm width, and a density of 8.5 × 109 cm-2. This droplet growth technique provides a means to produce topological insulator QDs in a reproducible and controllable way, providing convenient access to a promising quantum material with singular spin properties.

Chemicals Related in the Paper:

Catalog Number	Product Name	Structure	CAS Number	Price
AP12068698-A	Bismuth selenide		12068-69-8	Price

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