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Silica-sol-based Spin-Coating Barrier Layer Against Phosphorous Diffusion for Crystalline Silicon Solar Cells

Silica-sol-based Spin-Coating Barrier Layer Against Phosphorous Diffusion for Crystalline Silicon Solar Cells

Abdullah Uzum, Ken Fukatsu, Hiroyuki Kanda, Yutaka Kimura, Kenji Tanimoto, Seiya Yoshinaga, Yunjian Jiang, Yasuaki Ishikawa, Yukiharu Uraoka, Seigo Ito

Nanoscale Res Lett. 2014 Dec 5;9(1):659.

PMID: 25520602

Abstract:

The phosphorus barrier layers at the doping procedure of silicon wafers were fabricated using a spin-coating method with a mixture of silica-sol and tetramethylammonium hydroxide, which can be formed at the rear surface prior to the front phosphorus spin-on-demand (SOD) diffusion and directly annealed simultaneously with the front phosphorus layer. The optimization of coating thickness was obtained by changing the applied spin-coating speed; from 2,000 to 8,000 rpm. The CZ-Si p-type silicon solar cells were fabricated with/without using the rear silica-sol layer after taking the sheet resistance measurements, SIMS analysis, and SEM measurements of the silica-sol material evaluations into consideration. For the fabrication of solar cells, a spin-coating phosphorus source was used to form the n(+) emitter and was then diffused at 930°C for 35 min. The out-gas diffusion of phosphorus could be completely prevented by spin-coated silica-sol film placed on the rear side of the wafers coated prior to the diffusion process. A roughly 2% improvement in the conversion efficiency was observed when silica-sol was utilized during the phosphorus diffusion step. These results can suggest that the silica-sol material can be an attractive candidate for low-cost and easily applicable spin-coating barrier for any masking purpose involving phosphorus diffusion.

Chemicals Related in the Paper:

Catalog Number	Product Name	Structure	CAS Number	Price
AP898546822	CzSi		898546-82-2	Price

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