Home
Resources
Publications
Solution-Based Synthesis of Few-Layer WS 2 Large Area Continuous Films for Electronic Applications

Solution-Based Synthesis of Few-Layer WS 2 Large Area Continuous Films for Electronic Applications

Omar A Abbas, Ioannis Zeimpekis, He Wang, Adam H Lewis, Neil P Sessions, Martin Ebert, Nikolaos Aspiotis, Chung-Che Huang, Daniel Hewak, Sakellaris Mailis, Pier Sazio

Sci Rep. 2020 Feb 3;10(1):1696.

PMID: 32015500

Abstract:

Unlike MoS2 ultra-thin films, where solution-based single source precursor synthesis for electronic applications has been widely studied, growing uniform and large area few-layer WS2 films using this approach has been more challenging. Here, we report a method for growth of few-layer WS2 that results in continuous and uniform films over centimetre scale. The method is based on the thermolysis of spin coated ammonium tetrathiotungstate ((NH4)2WS4) films by two-step high temperature annealing without additional sulphurization. This facile and scalable growth method solves previously encountered film uniformity issues. Atomic force microscopy (AFM) and transmission electron microscopy (TEM) were used to confirm the few-layer nature of WS2 films. Raman and X-Ray photoelectron spectroscopy (XPS) revealed that the synthesized few-layer WS2 films are highly crystalline and stoichiometric. Finally, WS2 films as-deposited on SiO2/Si substrates were used to fabricate a backgated Field Effect Transistor (FET) device for the first time using this precursor to demonstrate the electronic functionality of the material and further validate the method.

Chemicals Related in the Paper:

Catalog Number	Product Name	Structure	CAS Number	Price
AP13862787	Ammonium tetrathiotungstate		13862-78-7	Price

As a specialist in analytical chemical Products, Alfa Chemistry offers consumers a wealth of raw materials and a full range of technologies and services.

QUICK LINKS

HEADQUARTERS

Tel:

Fax:

Email: