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Study of the Self-Assembling of N-Octylphosphonic Acid Layers on Aluminum Oxide

Tom Hauffman, Orlin Blajiev, Johan Snauwaert, Chris van Haesendonck, Annick Hubin, Herman Terryn

Langmuir. 2008 Dec 2;24(23):13450-6.

PMID: 18973311

Abstract:

The deposition of n-octylphosphonic acid on aluminum oxide was studied. The substrate was pretreated in order to achieve a root-mean-square roughness of <1 nm, a hydroxyl fraction of 30%, and a thickness of approximately 170 nm. It was proven using X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM) that, rather than a monolayer, an organic multilayer was formed. The growth mechanism was identified as a Stranski-Krastanov one. It was also shown that the use of AFM, probing the surface topography, is essential for a reliable quantification and interpretation of data obtained with XPS.

Chemicals Related in the Paper:

Catalog Number Product Name Structure CAS Number Price
AP4724485 Octylphosphonic acid Octylphosphonic acid 4724-48-5 Price
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