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Surface Chemistry Exchange of Alloyed Germanium Nanocrystals: A Pathway Toward Conductive Group IV Nanocrystal Films

Surface Chemistry Exchange of Alloyed Germanium Nanocrystals: A Pathway Toward Conductive Group IV Nanocrystal Films

Daniel A Ruddy, Peter T Erslev, Susan E Habas, Jason A Seabold, Nathan R Neale

J Phys Chem Lett. 2013 Feb 7;4(3):416-21.

PMID: 26281733

Abstract:

We present an expansion of the mixed-valence iodide reduction method for the synthesis of Ge nanocrystals (NCs) to incorporate low levels (∼1 mol %) of groups III, IV, and V elements to yield main-group element-alloyed Ge NCs (Ge1-xEx NCs). Nearly every main-group element (E) that surrounds Ge on the periodic table (Al, P, Ga, As, In, Sn, and Sb) may be incorporated into Ge1-xEx NCs with remarkably high E incorporation into the product (>45% of E added to the reaction). Importantly, surface chemistry modification via ligand exchange allowed conductive films of Ge1-xEx NCs to be prepared, which exhibit conductivities over large distances (25 μm) relevant to optoelectronic device development of group IV NC thin films.

Chemicals Related in the Paper:

Catalog Number	Product Name	Structure	CAS Number	Price
AP13450958	Germanium(IV) iodide		13450-95-8	Price

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