Bis(ethylcyclopentadienyl)nickel(II)

INQUIRY Add to cart

For Research Use Only | Not For Clinical Use

CAT	AP31886518
CAS	31886-51-8
MDL Number	MFCD01862458
Molecular Weight	244.99
InChI Key	VWHXTCKWIVCDGV-UHFFFAOYSA-N

Density	1.137 g/mL at 25 °C (lit.)
BP	90 °C (lit.)
Form	liquid
Linear Formula	Ni(C5H4C2H5)2
Size	5G

* Products or Services Interested: Bis(ethylcyclopentadienyl)nickel(II) (31886-51-8)
* Your question
* Name
* Email
Verification Code

Case Study

Bis-(ethylcyclopentadienyl) Nickel [(EtCp)₂Ni] Used for Nickel Thin Film Deposition via CVD

Protopopova, V. S., and S. E. Alexandrov. Surface and Coatings Technology 230 (2013): 316-321.

Bis-(ethylcyclopentadienyl) nickel [(EtCp)₂Ni] serves as an effective organometallic precursor for the chemical vapor deposition (CVD) of high-purity nickel films. In a recent study, its deposition behavior was investigated under two reaction systems-(EtCp)₂Ni-H₂-Ar and (EtCp)₂Ni-Ar-across a temperature range of 640-920 K. The experimental setup involved silicon wafer substrates and a controlled gas flow environment, with partial pressures of (EtCp)₂Ni between 8-100 Pa and hydrogen up to 350 Pa, while argon served as a carrier gas at 50 sccm.
Time-of-flight mass spectrometry was employed to elucidate the gas-phase reaction products formed during the pyrolysis of (EtCp)₂Ni. The results revealed key decomposition fragments, including peaks at m/e 70, 79-84, and 93-98, likely corresponding to intermediate nickel-containing species. Notably, the disappearance of ions at m/e 1, 44, and 65 (H⁺, CO₂⁺, and C₅H₅⁺ respectively) indicated ligand fragmentation and hydrocarbon elimination.
The study highlights that both inert and reducing atmospheres lead to similar gas-phase decomposition profiles, suggesting a dominant thermal decomposition mechanism. These insights contribute to the optimization of CVD parameters for uniform, conductive nickel coatings in microelectronics and surface engineering applications.

Bis-(Ethylcyclopentadienyl) Nickel [(EtCp)₂Ni] Used for the Deposition of Ni-C Thin Films via MOCVD

Alexandrov, S. E., and V. S. Protopopova. Journal of nanoscience and nanotechnology 11.9 (2011): 8259-8263.

Bis-(ethylcyclopentadienyl) nickel [(EtCp)₂Ni] is a promising volatile organometallic precursor employed for the metal-organic chemical vapor deposition (MOCVD) of nickel-carbon (Ni-C) thin films. This study investigates its applicability in both inert (Ar) and reducing (H₂-Ar) atmospheres under low-pressure deposition conditions
Depositions were carried out in a quartz hot-wall horizontal reactor maintained at 850 Pa. The precursor was introduced via argon carrier gas, with partial pressures of (EtCp)₂Ni ranging from 10 to 120 Pa and deposition temperatures spanning 720-870 K. A constant gas flow configuration was maintained (total flow: 100 sccm; Ar: 50 sccm; H₂: 25 sccm), and each deposition lasted for 60 minutes.
Preliminary results demonstrate the feasibility of (EtCp)₂Ni in forming Ni-C composite coatings. The organometallic compound exhibits suitable volatility and reactivity under the given conditions, producing continuous nickel-containing layers. The inclusion of hydrogen influenced the film formation process, likely by enhancing reduction reactions and modifying carbon incorporation.
These findings affirm the potential of (EtCp)₂Ni as a flexible precursor for engineering functional Ni-based thin films, particularly in applications requiring catalytic, magnetic, or alloyed surfaces. Further optimization may enable fine control over carbon content and film morphology, making (EtCp)₂Ni valuable in advanced materials synthesis via MOCVD.

Send Us a Request

What is your specific need? We will do everything we can to meet your expectations.

Online Inquiry