Tris(dimethylamido)aluminum(III)

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CAT	AP32093393
CAS	32093-39-3
Structure
MDL Number	MFCD00269811
Molecular Weight	159.21
InChI Key	JGZUJELGSMSOID-UHFFFAOYSA-N

Density	0.865 g/mL at 25 °C (lit.)
Form	solid
Linear Formula	Al(N(CH3)2)3
MP	82-84 °C (lit.)
Size	10G

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Case Study

Tris(dimethylamido)aluminum (TDMAA) Used for the Preparation of High-Quality AlN Films via Atomic Layer Annealing

Ueda, Scott T., et al. Applied Surface Science 554 (2021): 149656.

Tris(dimethylamido)aluminum (TDMAA) has been effectively employed in the low-temperature deposition of polycrystalline aluminum nitride (AlN) films on silicon substrates via atomic layer annealing (ALA), offering a robust alternative to conventional high-temperature processes. When paired with anhydrous hydrazine (N₂H₄) and argon plasma treatment, TDMAA enables the growth of AlN films with enhanced crystallinity, low impurity content, and large grain sizes.
The ALA process utilized TDMAA at 105 °C bottle temperature, delivered with Ar carrier gas under controlled pulse sequences to achieve uniform growth. A 20-second argon plasma step at 5 mTorr and 75 W, combined with a -25 V pulsed DC substrate bias, facilitated surface activation and crystallization during each deposition cycle. Films exhibited a growth rate of \~0.9 Å/cycle and were processed at substrate temperatures ≤400 °C in a high-vacuum environment.
Compared to films deposited using trimethylaluminum (TMA), TDMAA-derived AlN showed markedly lower oxygen and carbon contamination, enabling superior performance as a templating layer for subsequent sputter deposition. When used as the foundation for sputtered AlN, TDMAA-based AlN templates yielded over twofold enhancement in average grain size relative to amorphous templates.
This work underscores TDMAA's value in atomic-scale engineering of nitride films and its critical role in fabricating advanced dielectric and piezoelectric layers for high-frequency electronic applications.

Tris-dimethylamido Aluminum (TDMAA, Al(NMe₂)₃) Used for the Deposition of Nitrides via Atomic Layer Deposition

Mpofu, P., Hafdi, H., Lauridsen, J., Alm, O., Larsson, T., & Pedersen, H. (2024). Materials Advances, 5(23), 9259-9269.

Tris-dimethylamido aluminum (TDMAA, Al(NMe₂)₃) is a highly volatile and reactive precursor widely employed in atomic layer deposition (ALD) processes for nitride film fabrication. In a recent mechanistic study, TDMAA demonstrated efficient reactivity with ammonia (NH₃), enabling low-temperature nitride deposition with controlled surface chemistry.
Using a hot-wall Picosun R-200 Advanced ALD reactor and operating within 150-300 °C, TDMAA was sublimed at 120 °C and introduced into the chamber under 4 mbar pressure with N₂ as the carrier and purge gas. The deposition chemistry was probed using mass spectrometry, which revealed key surface reactions such as ligand exchange, β-hydride elimination, and transamination. Dominant gas-phase species including N(Me)₂ and HN(Me)₂ were detected during both TDMAA and NH₃ pulses, alongside CH₄, indicating decomposition pathways and protonation reactions.
Importantly, direct N-N coupling of ligands was not observed, suggesting that NH₃-mediated reduction pathways are more favorable. Arrhenius analysis yielded activation energies of 27-30 kJ/mol with pre-exponential factors of 3-5 s⁻¹, confirming that TDMAA enables efficient surface-controlled growth at relatively low thermal budgets.
These findings validate TDMAA as a preferred ALD precursor for nitride thin films, offering fine control over growth mechanisms and surface termination, which are critical for applications in microelectronics and advanced dielectric materials.

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